? semiconductor components industries, llc, 2010 july, 2010 ? rev. 5 1 publication order number: ntjd4001n/d ntjd4001n small signal mosfet 30 v, 250 ma, dual n ? channel, sc ? 88 features ? low gate charge for fast switching ? small footprint ? 30% smaller than tsop ? 6 ? esd protected gate ? pb ? free package is available applications ? low side load switch ? li ? ion battery supplied devices ? cell phones, pdas, dsc ? buck converters ? level shifts maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 250 ma t a = 85 c 180 power dissipation (note 1) steady state t a = 25 c p d 272 mw pulsed drain current t =10 s i dm 600 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 250 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using min pad size (cu area = 0.155 in sq [1 oz] including traces). sot ? 363 case 419b style 26 marking diagram & pin assignment http://onsemi.com te m 1 6 1 te = device code m = date code = pb ? free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) v (br)dss r ds(on) typ i d max 30 v 1.0 @ 4.0 v 1.5 @ 2.5 v 250 ma device package shipping ? ordering information ntjd4001nt1 sot ? 363 3000/tape & reel ntjd4001nt1g sot ? 363 (pb ? free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. top view sot ? 363 sc ? 88 (6 leads) d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 NTJD4001NT2G sot ? 363 (pb ? free) 3000/tape & reel
ntjd4001n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 56 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 10 v 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 100 a 0.8 1.2 1.5 v gate threshold temperature coefficient v gs(th) /t j ? 3.2 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.0 v, i d = 10 ma 1.0 1.5 v gs = 2.5 v, i d = 10 ma 1.5 2.5 forward transconductance g fs v ds = 3.0 v, i d = 10 ma 80 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 5.0 v 20 33 pf output capacitance c oss 19 32 reverse transfer capacitance c rss 7.25 12 total gate charge q g(tot) v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.9 1.3 nc threshold gate charge q g(th) 0.2 gate ? to ? source charge q gs 0.3 gate ? to ? drain charge q gd 0.2 switching characteristics (note 3) turn ? on delay time td (on) v gs = 4.5 v, v dd = 5.0 v, i d = 10 ma, r g = 50 17 ns rise time tr 23 turn ? off delay time td (off) 94 fall time tf 82 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 ma t j = 25 c 0.65 0.7 v t j = 125 c 0.45 reverse recovery time t rr v gs = 0 v, di s /dt = 8.0 a/ s, i s = 10 ma 12.4 ns 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjd4001n http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 0.2 0.1 1.2 0.4 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.06 0.02 0 figure 1. on ? region characteristics 1.2 2 1.6 2.2 0.1 0.06 0.02 1.4 0 1 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.5 0.25 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage ? 50 0 ? 25 25 1.4 1.2 1 0.8 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 1.25 t j = ? 55 c t j = 125 c 75 150 i d = 0.01 a v gs = 10 v r ds(on), drain ? to ? source resistance (normalized) 0.8 25 c 2 1.5 v 0.005 0.205 figure 6. drain ? to ? source leakage current vs. voltage 1.75 v 2 v 2.5 v 2 1.6 v ds = 5 v 0.75 v gs = 2.75 v v gs = 10 v to 3 v 0.04 0.08 0.12 0.08 0.04 1.8 t j = 125 c v gs = 10 v t j = ? 55 c t j = 25 c 1.0 1.8 1.6 030 v ds, drain ? to ? source voltage (volts) 10000 10 i dss , leakage (na) 1000 100 10 15 t j = 150 c t j = 125 c 5 v gs = 0 v 0.055 0.105 0.155 0.5 0.25 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 1.25 0.005 0.205 0.75 v gs = 10 v t j = 25 c 1.0 0.055 0.105 0.155 v gs = 4.5 v 0.6 0.4 0.2 20 25 0.18 0.16 0.14 2.25 v
ntjd4001n http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 30 20 10 0 25 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 0.2 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = 0.1 a t j = 25 c 50 0.6 2 3 q gd q gs 5 40 5 v gs v ds 15 0.4 1 0.65 0.02 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.75 0.1 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. diode forward voltage vs. current 5 0.8 q g 0.5 0.6 0.55 0.04 0.06 0.08 20 c rss c iss r(t), effective transient thermal response pulse time t,(s) 0.1 10 1000 single pulse 100 1000 10 1 0.1 0.01 0.000001 1 0.2 d = 0.5 0.01 0.02 0.1 0.05 figure 10. thermal response 100 0.001 0.0001 0.00001
ntjd4001n http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. ntjd4001n/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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